The TD2G16C9-Z8 is a 256M x 64bits DDR3-1600 LO-DIMM. The TD2G16C9-Z8 consists of 16pcs 128Mx8bits DDR3 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TD2G16C9-Z8 is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies,programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
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RoHS compliant products.
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JEDEC standard 1.8V ± 0.1V Power supply
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VDDQ=1.8V ± 0.1V
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Max clock Freq: 400MHZ; 800Mb/s/Pin.
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Posted CAS
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Programmable CAS Latency: 4,5,6
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Programmable Additive Latency :0, 1,2,3 and 5
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Write Latency (WL) = Read Latency (RL)-1
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Burst Length: 4,8(Interleave/nibble sequential)
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Programmable sequential / Interleave Burst Mode
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Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
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Off-Chip Driver (OCD) Impedance Adjustment
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MRS cycle with address key programs.
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On Die Termination
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Serial presence detect with EEPROM