The TD2G16C9-Z8 is a 256M x 64bits DDR3-1600 LO-DIMM. The TD2G16C9-Z8 consists of 16pcs 128Mx8bits DDR3 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TD2G16C9-Z8 is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies,programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

• RoHS compliant products.
• JEDEC standard 1.8V ± 0.1V Power supply
• VDDQ=1.8V ± 0.1V
• Max clock Freq: 400MHZ; 800Mb/s/Pin.
• Posted CAS
• Programmable CAS Latency: 4,5,6
• Programmable Additive Latency :0, 1,2,3 and 5
• Write Latency (WL) = Read Latency (RL)-1
• Burst Length: 4,8(Interleave/nibble sequential)
• Programmable sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver (OCD) Impedance Adjustment
• MRS cycle with address key programs.
• On Die Termination
• Serial presence detect with EEPROM